Proximity induced time-reversal topological superconductivity in Bi2Se3 films without phase tuning
نویسندگان
چکیده
منابع مشابه
Pressure-induced unconventional superconducting phase in the topological insulator Bi2Se3.
Simultaneous low-temperature electrical resistivity and Hall effect measurements were performed on single-crystalline Bi2Se3 under applied pressures up to 50 GPa. As a function of pressure, superconductivity is observed to onset above 11 GPa with a transition temperature Tc and upper critical field Hc2 that both increase with pressure up to 30 GPa, where they reach maximum values of 7 K and 4 T...
متن کاملSuperconductivity of the topological insulator Bi2Se3 at high pressure.
The pressure-induced superconductivity and structural evolution of Bi2Se3 single crystals are studied. The emergence of superconductivity at an onset transition temperature (Tc) of about 4.4 K is observed at around 12 GPa. Tc increases rapidly to a maximum of 8.2 K at 17.2 GPa, decreases to around 6.5 K at 23 GPa, and then remains almost constant with further increases in pressure. Variations i...
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Conductivity measurements on double-stranded DNA molecules deposited by a combing process across a submicron slit between rhenium/carbon metallic contacts reveal conduction to be ohmic between room temperature and 1 kelvin. The resistance per molecule is less than 100 kilohm and varies weakly with temperature. Below the superconducting transition temperature (1 kelvin) of the contacts, proximit...
متن کاملSuperconductivity with intrinsic topological order induced by pure Coulomb interaction and time-reversal symmetry breaking
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Recently, in certain flat band lattice systems at commensurate fillings, fractional quantum Hall states have been f...
متن کاملTuning the Fermi level with topological phase transition by internal strain in a topological insulator Bi2Se3 thin film.
In a three-dimensional topological insulator Bi2Se3, a stress control for band gap manipulation was predicted but no systematic investigation has been performed yet due to the requirement of large external stress. We report herein on the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. Using small angle X-ray scattering and R...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2019
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.99.161301